DYG1000 Semi Automatic Wafer Grinder
Precision and stability are the essential features of Dyan’s wafer grinders, which can be attributed to our extensive experience and advanced technologies. Building upon this foundation, we have made targeted upgrades to the grinding process for new wafer materials, such as gallium nitride, silicon carbide, and silicon nitride.
Accessible TTV (6-inch SiC) | 2.8 μm |
Accessible Thickness (6-inch SiC) | 60 μm |
Accessible Roughness (SiC Fine Grinding) | Sa. 0.6 nm |

Brief Introduction
The Semi-Automatic Grinding Machine series features a more compact body design and is typically used in laboratory and light production line scenarios. The grinding center serves as the core unit for all grinder series, employing a frame made of granite material. Coupled with our independently developed high-power air bearing spindle and unique stroke mechanism, the machine can deliver high-quality surface results and precision.

Air Bearing
Grinding Spindle

Aerostatic Granite
Turntable

In-Process
Thickness Gauge

Microporous
Vacuum Table
Engineering Intent
The wafer grinder actively reduces the thickness of the semiconductor wafer in the fabrication process. This is done to achieve better heat dissipation and increase the integration density of the devices on the wafer. Moreover, the wafer grinder effectively produces a smooth, flat surface for subsequent procedures by removing surplus material from the wafer surface. This particular step is crucial in the fabrication of integrated circuits and other semiconductor devices.
System Model | DYG1100 | DYG1200 | DYG1300 |
Max. Wafer Diameter (inch) | 4 | 8 | 12 |
Grinding Wheel Diameter (mm) | ∅ 209 | ∅ 209/254 | ∅ 312 |
Grinding Spindle Power (kW) | 5.5 | 7.5 | 11 |
Grinding Rotation Rate (rpm) *ccw & cw | 500 - 3000 | 500 - 3500 | 500 - 4000 |
Table Rotation Rate (rpm) *ccw & cw | 10 - 450 | 10 - 450 | 10 - 450 |
Z-aixs Stroke (mm) | 100 | 100 | 100 |
Z-axis Feed Rate (μm/s) | 0.1 - 80 | 0.1 - 80 | 0.1 - 80 |
Thickness Gauge Resolution (μm) *optional | 0.1 | 0.1 | 0.1 |
Acoustic Emission Signal (kHz) *optional | 20 - 1000 | 20 - 1000 | 20 - 1000 |
Total Power (kW) | 8 | 11 | 14 |
Weight (kgf) | 1700 | 1760 | 1920 |
Dimension (L×W×H) (mm) | 1150 × 1220 × 1980 | 1150 × 1220 × 1980 | 1150 × 1220 × 1980 |
1. Air Bearing Spindle
The grinding spindle's bearing leverages dry and clean air funneled through microporous layers to support the rotor shaft against the stator, enabling fast and smooth rotation. This design eliminates any physical contact during the spindle's spin. Known as "Microporous Air Bearings," this type of bearing offers unmatched durability and stability for the spindle.
Following a dynamic balance adjustment, Dyan's air bearing spindle achieves extremely low amplitude rotation at 3000 RPM, with radial pulsation under 0.1 micron.

Microporous Air Bearing
2. Worktable and Vacuum
The worktable is driven by a high-resolution servo motor capable of rotating, featuring an automatic homing function. For models equipped with a contact thickness gauge, the sealing ring of the vacuum worktable is made of ceramic and serves as the benchmark reference for the thickness gauge.
The vacuum clamping adapts microporous ceramic as the medium which can be selectively equipped with single-size or universal-size and includes a blow-back function, allowing for the safe removal of wafers and expulsion of impurities from within the ceramic pores. Universal vacuum table can accommodate wafers ranging from 2 inches to 12 inches on the same table by embedding adsorption areas of various sizes. Additionally, custom-designed vacuum table is provided for irregularly shaped planes.

Universal Vacuum Table
3. Difference of In-process Thickness Gauges
A high-precision, in-process thickness gauge (IPG) is a crucial component in grinders, directly impacting the consistency of grinding precision. It also offers the significant benefit of providing precise offset measurements for the grinding wheel's consumption. Dyan provides two sorts of in-process thickness gauges available as options for monitoring wafer thickness under various grinding conditions.
- The Contact Gauge features two precision probes that maintain constant contact with the wafer and the benchmark on worktable during inspection. The difference in height between the two points being measured indicates the wafer's thickness (or the thickness including the UV tape). This gauge may leave a barely visible circular imprint, which can be removed in the fine grinding process.
- The Non-Contact Gauge employs infrared technology to assess the wafer's true thickness by analyzing the volume of ray absorption, reflection, and dispersion. This method does not include the thickness of the UV film or adhesive in its measurements. It is essential for finish polishing and ultra-thin grinding to ensure the safety of the wafer.

IPG Measurement Range Diagram
4. Built-in Acoustic Emission Sensor
A built-in Acoustic Emission (AE) Sensor in a grinding spindle is a sophisticated in-process monitoring tool that detects high-frequency sounds produced during the grinding process. These sounds are converted into electrical signals for analysis, providing valuable insights into the grinding conditions, such as the interaction between the grinding wheel and workpiece, and the presence of material defects or wheel dullness. This real-time feedback enables on-the-fly process optimization, improving surface finish quality, reducing tool wear, and enhancing efficiency.
Additionally, the AE sensor aids in preventive maintenance by predicting equipment failures, thus minimizing downtime and extending the lifespan of grinding machinery. This integration not only optimizes the grinding efficiency and surface finish but also supports predictive maintenance, reducing downtime and extending the lifespan of the equipment.

Built-in AE Sensor
*Reminder: we only offer once free and limited sampling. The expenses of delivery and prourement of the sample entity are to be covered by the sender.



Process |
Industry |
Product |
||||||
---|---|---|---|---|---|---|---|---|
Grinding |
Wafer Substrate |
AIN |
GaAs |
GaN |
Ge |
Ge-Si |
Glass |
InP |
InSb |
Quartz |
Sapphire |
Si |
SiC |
ZnO |
|||
Semiconductor |
Detector Device |
Filter Device |
Laser Device |
Micro LED |
Mini LED |
|||
Optical Communication Device |
Power Device |
RF Device |
Silicon Photonic Device |
|||||
MEMS |
Accelerometer |
Gyroscope |
Humidity Sensor |
Microphone |
Optical Sensor |
Pressure Sensor |
||
Advanced Packaging |
Fan-out |
SIP |
TSV |
|||||
Flat Optics |
Holographic Slide |
Glass Slide |
Optical Lens |
Optical Reflector |
Sample |
Major |
Dimension |
Applied |
Thickness |
TTV |
Roughness |
Flatness |
---|---|---|---|---|---|---|---|
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Silicon |
6 |
Coarse Grinding |
120 |
2.472 |
2.404 |
1.518 |
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Silicon |
6 |
Coarse Grinding |
150 |
2.643 |
0.745 |
1.343 |
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Gallium |
4 |
Coarse Grinding |
300 |
2.181 |
1.163 |
1.089 |
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Germanium |
4 |
Coarse Grinding |
145 |
2.205 |
0.856 |
1.273 |
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Sapphire |
4 |
Coarse Grinding |
220 |
2.315 |
0.933 |
1.148 |
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Gallium |
4 |
Coarse Grinding |
60 |
2.240 |
8.065 |
1.928 |
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Silicon |
12 |
Coarse Grinding |
75 |
2.782 |
10.065 |
1.455 |
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Piezoelectric |
2 |
Coarse Grinding |
50 |
1.651 |
32.468 |
0.843 |
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Solar Wafer |
8.839 |
Coarse Grinding |
100 |
3.188 |
13.427 |
2.212 |